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Samsung Partners AMD to Develop First 12nm-Class DDR5 DRAM for Next-gen Computing

Yusuf Balogun
Yusuf Balogun
Yusuf is a law graduate and freelance journalist with a keen interest in tech reporting.

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In a bid to advance next-generation computing, data centers, and AI applications, Samsung Electronics has today announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD.

The industry’s first 12nm-class DDR5 DRAM was developed by Samsung in collaboration with Advanced Micro Devices, AMD, the high-performance and adaptive computing leader.

The First 12nm-Class DDR5 DRAM Technology

This technological advancement was made possible by introducing a new high-grade material that boosts cell capacitance and a proprietary design technique that enhances key circuit properties. The new DRAM has the largest die density in the market and sophisticated, multi-layer extreme ultraviolet (EUV) lithography, enabling a 20 percent increase in wafer productivity.

Samsung 12 nm Memory
Samsung 12 nm class DDR5 DRAM Memory | Image credit: Samsung

Samsung’s 12nm-class DRAM will enable speeds of up to 7.2 gigabits per second by utilizing the most recent DDR5 standard (Gbps). This corresponds with processing two 30 GB UHD movies in a single second.

DRAM: Powering An Exceptional Speed

The extraordinary speed of the new DRAM is complemented by improved power efficiency. The 12nm-class DRAM, which uses up to 23% less power than the preceding DRAM, will be the perfect choice for international IT organizations pursuing more environmentally friendly operations.

As it continues to collaborate with industry partners to enable the quick adoption of next-generation computing, Samsung expects to expand its DRAM lineup, built on this cutting-edge 12nm-class manufacturing technology, across a wide variety of market sectors beginning in 2023.

DRAM: A Key Enabler in Driving Market-wide

Speaking about the new DRAM, Jooyoung Lee, the Executive Vice President of DRAM Product & Technology at Samsung Electronics, said it is a key enabler in driving market-wide adoption of DDR5 DRAM.

“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centres and AI-driven systems.”

On the other hand, Joe Macri, the Senior VP, Corporate Fellow, and Client, Compute, and Graphics CTO at AMD, said they are thrilled to collaborate with Samsung in introducing the DDR5 memory products.

“Innovation often requires close collaboration with industry partners to push the bounds of technology,” said Joe Macri. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms.”


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